The Applied Technical Services Family of Companies (ATS FoC) provides semiconductor failure analysis to help manufacturers identify defects, investigate performance issues, and determine the causes of electronic device failures. We examine semiconductor materials, packages, and interconnections to locate abnormalities that affect functionality or reliability. Our laboratory uses specialized techniques such as microsectioning, metallography, grain structure analysis, defect analysis, delamination analysis, and bond wire analysis to characterize defects and evaluate potential failure mechanisms. By analyzing components and interpreting test results, we help manufacturers address failures, assess product quality, and implement corrective actions to improve performance and reliability.
Which Testing Methods Support Semiconductor Failure Investigations?
We use both nondestructive and destructive testing methods to identify defects and determine their root causes. Our approach depends on the component and suspected failure mechanism, and may include:
- Optical microscopy: Reveals surface damage, visible defects, and structural irregularities.
- X-ray and computed tomography (CT): Examine internal structures and help identify voids, cracks, delamination, and assembly defects without damaging the sample.
- Scanning electron microscopy (SEM): Provides detailed images of microscopic features, fractures, bond wire interfaces, and material interconnects.
- Microsectioning: Cuts, mounts, and polishes components to expose internal structures for detailed examination of die attach, layers, solder joints, plating, bond wires, and interconnections.
- Metallography: Prepares and etches polished cross-sections to evaluate metallic structures, intermetallic layers, and material interfaces under magnification.
- Grain structure analysis: Examines the size, shape, and orientation of metal grains in bond wires, solder joints, and metallization to reveal the effects of processing, thermal exposure, fatigue, or material inconsistencies.
We select testing methods based on sample condition, investigation objectives, and available evidence. Using multiple techniques provides a comprehensive understanding of semiconductor failures.
Our Semiconductor Failure Analysis Services
Our semiconductor failure analysis services help manufacturers investigate defective components, evaluate manufacturing inconsistencies, and assess product reliability. We examine semiconductor packages, integrated circuits, printed circuit boards, and interconnections to identify abnormalities that affect electrical or structural performance. Our analytical capabilities support investigations of material defects, assembly irregularities, damaged interfaces, and other potential failure mechanisms.
Depending on the investigation, we evaluate component construction, examine microscopic features, and characterize materials or defects. Our core capabilities include:
- Defect analysis: Identifies, locates, and characterizes voids, cracks, contamination, corrosion, and other anomalies that may contribute to a failure.
- Delamination analysis: Evaluates separation between bonded layers, such as die attach, mold compound, substrate, and lead frame interfaces, to determine extent, location, and likely cause.
- Bond wire analysis: Inspects wire bonds, ball bonds, and stitch bonds for lifted bonds, heel cracks, wire sweep, necking, intermetallic growth, and other signs of weakness or fatigue.
These evaluations help manufacturers assess component quality, investigate recurring problems, and determine whether manufacturing processes or material conditions contributed to a failure.
How Do Cracks, Delamination, and Bonding Defects Affect Semiconductor Reliability?
Cracks, delamination, and bonding defects compromise semiconductor performance by disrupting electrical connections, weakening structural interfaces, or accelerating component degradation. Cracks can propagate through package materials, substrates, or interconnections under mechanical or thermal stress. Delamination separates bonded layers, allowing moisture intrusion and reducing structural integrity. Bond wire failures, such as lifted bonds, fractured wires, or excessive intermetallic growth, may cause open circuits or intermittent connections. Incomplete bonding or defective solder joints can increase electrical resistance, interrupt signal transmission, or cause intermittent connections. Grain structure irregularities may indicate improper processing or fatigue that reduces the strength of metallic interconnections.
Contact Us
Call +1 (888) 287-5227 or submit our online request form to connect with our team and learn how our laboratory services can support your defect investigations, manufacturing quality, and semiconductor reliability.
